cuinse2和cuinsse2薄膜的制备及性能研究word格式论文.docxVIP

摘要太阳能是一种可再生的清洁能源，在人类世界面临严重能源危机的情况下， 对太阳能电池的研究意义重大。CuInSe2(CIS)薄膜太阳能电池具有转换效率高、 成本低、稳定和无毒等优点，是最有发展前景的薄膜太阳能电池之一。本论文主要介绍溅射后硒化法和溶液法制备 CuInSe2 及 CuIn(S,Se)2 薄膜材料 的方法以及不同的工艺条件对其光电特性的影响。主要得到以下结论：（1）当薄膜的衬底为碱石灰玻璃时，样品在不同退火工艺的作用下，Na 元素 对 CuInSe2 薄膜材料性能的影响很大，Na 离子在 CuInSe2 薄膜材料中占据 Cu 离 子的空位并与 Se 元素结合形成 Na2Se 物质，当经过高温退火后样品的电阻率变 为 1230Ω?cm。（2）当 S 元素掺入时，CuInSe2 薄膜材料的禁带宽度会提高，进而提高 CuInSe2 电池的效率。此论文研究硫和硒同时硒化的情况下硒化温度对 CuIn(S,Se)2 材料 性能和结构的影响，发现当硒化温度为 550℃，有助于合成均匀的、高质量的 CuIn(S,Se)2 薄膜材料。（3）溶液法制备 CuIn(S,Se)2 薄膜材料是一种简易的制备方法，目前通过此 方法制备 CuIn(S,Se)2 太阳能电池的最高效率达到 12%。此论文研究预退火温度 对 CuIn(S,Se)2 薄膜材料结构和性能的影响，当预退火温度为 250℃时制备的薄 膜，与不经过预退火薄膜的电阻率相比要少 3 个数量级，而且晶格质量好、缺陷 少。本论文中制备 CuIn(S,Se)2 薄膜材料的禁带宽度为 1.29eV。用 SEM、XRD、Raman、XPS 和 Hall 效应测量仪等测试仪器对薄膜的性质 进行表征。关键词：CuInSe2，CuIn(S,Se)2，溅射后硒化法，溶液法，预退火。AbstractSolar energy is one kind of reproducible clean energy. For the serious energy crisis, it is significant to research solar cells. CuInSe2 solar cells polycrystalline solar cell was regarded as a Promising future generation of solar energy devices due to its lower cost, high conversion efficiency and prominent stability.In this paper，we studied CuInSe2 and CuIn(S,Se)2 photovoltaic materials preparedby sputtering and solution methods. The main contents of this paper are listed as the following:The films were deposited on substrates of soda-lime glass, a great influence on the structure and properties of different samples due to different annealing process. We found that Na ion filled with the Cu vacancies of the CuInSe2 thin films, and exists by the form of Na2Se. When annealed at high temperatures, the resistivity of CuInSe2 thin film is about 1230 Ω·cm.As the elements of S doping, the band gap of CuInSe2 thin film increased, It wasbenefit to improve the conversion efficiency of CuInSe2 solar cells. This thesis studied the affect of the properties and structure of CuIn(S,Se)2 photovoltaic materials due to the temperature of selenium.Solution method is Simple method to prepare CuIn(S,Se)2 solar materials and