替代9X5.0.pdf

PESDNC9D5VB ESD Protector Description The PESDNC9D5VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical. Feature 100W peak pulse power per line (t = 8/20μs) P SOD-923 package Replacement for MLV(0402) Bidirectional configurations Response Time is Typically 1 ns ESD protection 16 kV Low clamping voltage RoHS compliant Transient protection for data lines to IEC 61000-4-2(ESD) ±15KV(air), ±8KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns) Applications Cellular phones Portable devices Digital cameras Power supplies Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-off Voltage VRWM 5 V Reverse Breakdown Voltage V I = 1mA 5.6 6.7 7.8 V BR t Reverse Leakage Current IR VRWM = 5V T=25 ℃ 1.0 μA Junction Capacitance C V =0V f = 1MHz 6 10 pF