标准CMOS工艺光电二级管及光标签的研制.pdfVIP

M aterials and Devices doi: 103969/jissn1003- 353x201102003 CMOS 魏琪, 张春 (清华大学微电子研究所, 北京 100084) : 提出了一种作为无源射频 ( FID) 识别标签电源的光电二极管 方案采用光电转 换获取能量的方式替代传统电磁辐射获得能量的方式, 克服了传统方案中 FID读写器辐射强且 FID Tag抗干扰能力差的缺点光电二极管采用标准 UMC 018 m CMOS工艺制作在 FID Tag 上研究了光电二极管的光伏及伏安特性, 并给出了实验结果; 使用低压测试电路对制作完毕的 PD进行了功率输出性能实验, 实验结果证明 PD满足设计指标和后续电路的使用要求; 对实验 数据进行系统建模和参数估计, 建立了可以应用于 Cadence仿真环境的光电二极管模型; 最后, 利用仿真模型进行光标签的设计, 流片测试结果证明了光标签的可行性 : 射频识别; 互补型金属氧化物半导体; 光电二极管; 仿真模型; 光标签 : TN3642 : A : 1003- 353X ( 2011) 02- 0104- 04 Research of Photodiodes and Optical Tags in Standard CMOSProcess W eiQ,i Zhang Chun (Institute of M icroelectronics, Ts inghua University, B eij ing 100084, China) Abstract: A photo diode ( PD) as the power supply of passive FID tags was presented. The energywas obtained by employing theway of the photoelectric conversion instead of the traditionalway to obtain the energy from electrom agnetic radiation. This technology was used to overcome the strong radiation intensity of the FID reader and the shortcom ings of poor ant-i interference ability of the FID tag. The PD integrated into the FID tagwas fabricated byUMC 018 m CMOS standard process. The photovoltaic and volt-ampere characteristics of thePD were studied and the test resultswere given. The low-voltage circuit for the energy expermi entproves that thePD can provide an enough drivepower for the follow ing circuit. According to the testdata analysis and param eter extraction, a smi ulationmodelof the photodiode in Cadence smi ulation environmentwas proposed. Finally, based on the Cadence smi ulation mode,l the optical tagwas designed, and the feasibilitywas proved. Key words: radio frequency identification ( FID ); CMOS; photodiode ( PD ); smi ulation mode;l optical t