嵌入式开发-ATMega8制作无感无刷(BLDC)电调资料-IRFR5305.pdfVIP

PD - 91402A IRFR/U5305 ® HEXFET Power MOSFET Ultra Low On-Resistance Surface Mount (IRFR5305) D VDSS = -55V Straight Lead (IRFU5305) Advanced Process Technology RDS(on) = 0.065Ω Fast Switching G Fully Avalanche Rated I = -31A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting D-Pak I-Pak applications. Power dissipation levels up to 1.5 watts are IRFR5305 IRFU5305 possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ -10V -31 D C