pzt热释电厚膜低温烧结特性及温区扩展分析-analysis of low temperature sintering characteristics and temperature range expansion of pzt pyroelectric thick film.docxVIP

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pzt热释电厚膜低温烧结特性及温区扩展分析-analysis of low temperature sintering characteristics and temperature range expansion of pzt pyroelectric thick film.docx

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pzt热释电厚膜低温烧结特性及温区扩展分析-analysis of low temperature sintering characteristics and temperature range expansion of pzt pyroelectric thick film

ABSTRACTLead zirconate titanate(PZT) materials has been widely used to prepare sensors, transducer and actuator for its excellent ferroelectric, piezoelectric and pyroelectric performance. Zr-rich PZT is a promising candidate to make infrared detectors because it has a high pyroelectric coefficient when the transition from rhombohedral ferroelectric low temperature phase (FRL) to rhombohedral ferroelectric high temperature phase (FRH) takes place. Recently, PZT thick films have drawn much attention because they have better electrical properties than thin films and it is unnecessary to grind or polish them like pyroelectric ceramics, which is good for miniaturization and integration of device. Compared with other existing methods, screen printing is flexible, cost-effective fabrication method for fabrication of thick films.However, the processing temperatures required to obtain dense PZT ceramics are about 1200 ℃, which is too high for most of substrates and incompatible with the infraredfocal plane array technologies. The LTCC technique also needs to reduce the sintering temperature to co-sintered with Ag electrode. With this end in view, reducing the sintering temperature is essential for the fabrication and practical application of high performance PZT thick films. The main aim of our research is to reduce the sintering temperature of PZT thick film to below the melting point of silver and improve the electrical of PZT thick films.First of all, the Pb(Zr0.9Ti0.1)O3 thick films were fabricated on Al2O3 substrate via the screen printing technology by using Bi2O3-Li2CO3 additions as liquid-phase sintering aids. The dependence of microstructure, dielectric and pyroelectric properties on the content of sintering aids has been studied. When a proper quantity of Bi2O3-Li2CO3 doped in the thickfilms, the sintering temperature of the thick films decreases to 1050℃, and the grain size,density and electrical of the thick films increase. The Pb(Zr0.9Ti0.1)O3 thick film with