忆阻器可变电阻模型改进与并联忆阻器量化电路设计-improvement of memristor variable resistance model and quantization circuit design of parallel memristor.docxVIP

目录摘要iABSTRACTii第一章 绪论 ........................................................11.1 研究背景及意义 ............................................................................................... 11.2 国内外研究现状 ............................................................................................... 21.2.1 忆阻器发展状况 .................................................................................... 21.2.2 忆阻器研究前沿 .................................................................................... 21.2.3 量化电路研究现状 ................................................................................ 31.3 论文结构 ........................................................................................................... 51.4 本章小结 ........................................................................................................... 5第二章 背景知识及基本理论 ............................................72.1 忆阻器基础理论 ............................................................................................... 72.1.1 忆阻器的定义及特性 ............................................................................ 72.1.2 钛氧化物忆阻器的工作机理 ................................................................ 92.2 忆阻器的电路学特性 ..................................................................................... 132.2.1 无源特性 .............................................................................................. 132.2.2 电路等效特性 ...................................................................................... 142.2.3 开关特性 .............................................................................................. 152.3 忆阻器的 SPICE 模型 162.3.1 基于杂质漂移理论的忆阻器 SPICE 模型 162.3.2 带有门限电压的 SPICE 模型 182.4 本章小结 ......................................................................................................... 20第三章 忆阻器可变电阻模型的改进 .....................................213.1 可变电阻模型及其存在的问题 ..................................................................... 213.2 改进的可变电阻模型 ...........................................