忆阻器测试方法及其触发器应用分析-analysis of memristor test method and trigger application.docxVIP

AbstractThe memristor is the fourth basic component besides the resistor, capacitor and inductor. Memristor is a nonlinear resistor with memory function, and its resistance depends on the number of the charge that flow through it. The physical realization of the memristor has shocked the world. Memristor has the characteristics of nonlinear resistive change, high speed, low power consumption, high integration density and compatibility of storage and computing. The research of memristor testing methods and flip-flop circuit application has a great significance in the fields of information storage and logic computing.This paper is focus on the characterization and testing of the memristor from the direct current, alternating current and pulse operation. A testing system that include normal and high speed testing is developed, and the related control program is also designed. The system is designed considering the signal integrity problem in high speed testing and guarantees the reliable transmission of high frequency signal. A series of testing results prove the feasibility and reliability of testing methods and testing system. The fast resistive-change phenomenon in AgInSbTe memristor is also achieved.In this paper, a memristor SPICE model based on the boundary migration theory is also built and the memristive characteristic is analyzed by simulation. A memristor-based nonvolatile flip-flop circuit is designed and functionally verified by SPICE simulation.The researches above have great value to the application of memristor in information storage and logic computing fields.Key words: Memristor, Testing Methods, Testing System, Flip-flop Circuit目录摘要 ........................................................................................................ IABSTRACT ..............................................................................................II目录 ..................................................................................................... III1绪论 .