忆阻器件的特性与电路应用分析-analysis of characteristics and circuit applications of memristor devices.docxVIP
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忆阻器件的特性与电路应用分析-analysis of characteristics and circuit applications of memristor devices
摘 要摘要忆阻器件是一种新型二端器件,它具有简单的金属/绝缘体/金属结构,同时具 备低压低功耗、速度快以及易于集成等诸多优点。作为第四种电路元件,忆阻器 件有着与电阻、电容及电感不同的电学特性,且不能被三者替代,它可以广泛地 应用于存储器、模拟电路、数字电路等电路中。本文首先讨论了忆阻器件的相关特性,介绍了忆阻器件的基本概念,包括忆 阻器件的基本结构、工作原理等;分析了器件的电流电压特性,同时建立了忆阻 器件电流电压特性的模型;接着研究了忆阻器件的阻变机制,包括导电细丝机制 和势垒型机制。研究了基于忆阻器件的可重复擦写阻变存储器件,试制了基于忆阻器件的可 重复擦写阻变存储器件,并对器件进行了测试与分析。所制备的器件是双极型阻 变存储器件,用导电细丝机制解释了器件阻变的原因,它可以实现多值存储功能, 且器件经过 104 次擦写后仍可以正常工作,存储的数据可以保存 10 年。同时研究 了器件的抗辐照特性,采用总剂量的方法进行伽马(γ)射线试验,器件在辐照后 仍然可以发生阻值跳变,且高、低阻态阻值都有所增加,但器件仍可以正常工作, 展现了很好的抗辐照性能。研究了基于忆阻器件的只写一次存储器件,制备了基于 HfO2 薄膜的只写一次 存储器件,器件可以在施加合适的电压脉冲后由高阻态跳变至低阻态,处于低阻 态的存储器件将保持阻值不变,阻值的变低是由于导电细丝的生长,同时器件具 备良好的读值耐疲劳特性和保持时间特性。研究了基于忆阻器件的模数转换器(ADC)中的量化器,首先介绍了模数转 换器的相关知识,包括基本结构以及 Flash ADC 的工作原理。然后设计了基于忆 阻器件的 ADC 中的量化器,接着建立仿真量化器电路的 SPICE 模型,同时对基于 忆阻器件的 4 位 ADC 中的量化器进行了仿真,仿真结果表明所设计的电路可以实 现量化功能,同时制作了可以分辨 5 种电压状态的简化量化器板级电路,验证了 所设计电路的可行性。关键词:忆阻器件,阻变存储器,模数转换器,量化器ABSTRACTABSTRACTMemristor is a new kind of two-terminal device, it has a simple metal/dielectric/metal structure and many advantages, such as, low voltage and power consumption, high speed and ease of integration. As the fourth kind of circuit components, memristor has different electrical properties with resistor, capacitor and inductor, and it cannot be replaced by these three components, it can be widely used in storage, analog circuits, digital circuits and other circuits.Firstly, this paper discusses the related characteristics of memristor, the basic concepts of memristor are introduced, including basic structure, working principle of memristor, etc.; Current voltage characteristic of memristor is analyzed, and the model of memristor’s current voltage characteristic is discussed; Resistance change mechanisms of memristor is studied, including conductive filament mechanism and barrier mechanism.Rewritable resistive random access memory device based on memristor have been studied, rewritable resistive random access memory devices based on memristor havebeen trial-manufactured,then the devices are tested and analyzed, they can realizem
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