gopedotpss复合材料的制备及光电性能研究-preparation and photoelectric properties of gopedotpss composites.docx

AbstractCarbon materials have abundant sources and low costs, their unique physical and chemical properties are gradually being discovered, recognized and applied by human being. Graphene oxide as an outstanding representative of new carbon materials attracted a lot of attentions because of its superior performances, which makes it an ideal candidate for composite material. Graphene oxide is expected to be applied in organic optoelectronic devices.In this thesis, graphene oxide (GO) solution has been prepared by using Hummers’ method. The solutions of graphene oxide and PEDOT: PSS (poly 3, 4-ethylenedioxythiophene: polystyrenesulfonic acid) are mixed physically andfive groups of graphene oxide/PEDOT： PSS composite films with differentweight ratios have been prepared by changing the substrate materials and film-forming methods. The surface morphology, electronic and optical properties of the GO/PEDOT: PSS composite films were characterized by scanning electron microscopy (SEM), Hall Effect measurement system and UV-visible spectrophotometer, respectively.As the content of graphene oxide increased, the surface morphology of GO/PEDOT: PSS composites films with different substrate materials and film-forming methods showed similar variation observed by SEM. The dispersion of graphene oxide in PEDOT: PSS matrix gradually decreases with increasing graphene oxide’s content. When GO’s content reaches to a certain extent, apparent aggregation of graphene oxide occurs and forms a continuous network finally. This network influences electrical properties of composite films greatly; Hall Effect measurement shows that the effects of different substrate materials and film-forming methods on electrical properties of GO/PEDOT: PSS composite films also show similar trends. The resistivity of GO/PEDOT: PSS composite films decreased first as the content of graphene oxide increased, and then increased; the carrier concentration of the films decreased f