Development of a Low Dielectric Constant 集成电路制造所需低介电常数聚合物发展(正式版).docxVIP

Adv. Mater.2000, 12,No. 23, December I 6WJLEY-VCH Verlag GmbH, D 酬69 Weinhcim, 2酬 0935唰棚12312-1769 $17.50+.50础 1769 ADVANCED Development of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit Interconnect By Steven J. Martin,* James P. Godschalx, Michael E. Mills, Edward 0. Shaffer II, and Paul H. Townsend For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectricDSiLK resin, a solution of a low-molecular-weight aromatic thermosetting 阴阳阳 are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given. 1. Introduction grated circuit interconnect, summarizes the prop erties of the n巳w dielectric invented to meet that n巳巳d, and reviews pub- A new organic polymer, SiLK (tradema rk of The Dow Chemical Company) semiconductor dielectric, was recently developed to enable the fabrication of faster, smaller, and higher performan ce integrated circuits. The new material addresses a critical need of the microelectronics industry: an insulator with low dielectri c constant to replace silicon diox- ide. The electrical properties of silicon dioxide now limit the pe巾rmance of the microprocessor and other advanced semi- conductor devices so important to modem electronic and informat ion technologies. This article describes the need for low-diel民tric-constant materials in the fabrication of inte- 土 [] S. J. Martin The Dow Chemical Company 2030 Buildi ng Midland , Ml 48674 (USA) E-mail:  HYPERLINK mailto:sjmartin@ sjmartin @ J. P.Godschalx The Dow Chemical Company 1701 Buildi ng Midland , Ml 48674 (USA) M. E. Mills The Dow Chemical Company 1714 Building Midland, Ml 48674 (USA) E. 0. Shaffer II The Dow Chemical Company 1702 Building Midland,Ml 48674(USA) P. H Townsend The Dow Chemical Compa ny 1712 Buildi ng Mid