GaN_SiHEMT的电学特性测和可靠性测.docVIP

GaN/Si HEMT的电学特性测试和可靠性测试 摘要 随着集成电路的发展，摩尔定律一直驱动着集成电路的基本单元，即金属-氧化物-半导体场效应管的等比例缩小。在等比例缩小中，我们必须把栅氧化层的厚度减小为原来的1/x。在CMOS进步到45nm时代以后，传统的SiO2栅介质的厚度将被需要缩减到相当薄的程度，这会使得SiO2层的栅泄漏电流在显著的量子隧穿效应影响下大到不可接受，器件的可靠性也会成为一个相当严重的问题。当厚度无法再减小时，为了提高栅电容，唯一的办法就是提高介质的相对介电常数。 本文选择HfO2高K栅介质作为研究对象，通过电学特性测试，即C-V，I-V图谱分析，来阐释其栅漏电流机制。同时综述了高k栅介质可靠性的研究现状，对恒压应力与恒流应力和高k击穿特性进行了探讨。我们的研究结果有助于进一步了解HfO2栅介质的泄漏电流机制和SILC效应的特征，为进一步优化HfO2高K栅介质的制备工艺提供指导。同时发现高K栅介质结构的TDDB击穿不仅是应力电压极性依赖的，而且是应力电场依赖的。 关键词：高k栅介质 栅极漏电流 HfO2 击穿机制 应力感应电流  Study on electrical property and reliability of HEMT on GaN/Si Abstract Along with the development of integrated circuit, Moore’s Law is driving the scaling down of the basic element of integrated circuit, which is called metal-oxide-semiconductor field effect transistor. In the principle of scaling down， we have to reduce the thickness of gate oxide with a scale of 1/x at every technology node. With the continued scaling-down of MOSFET the thickness of traditional SiO2 dielectrics have to be reduced to a very thin level, which dramatically increases the leakage current caused by quantum tunneling. Meanwhile, the reliability of gate dielectrics is also degraded. As it is not possible to reduce the thickness of gate oxide any more, we have to choose a dielectric with higher dielectric constant in order to maintain the gate capacitance. Our researches focus on HfO2 dielectrics. We explain the mechanism of leakage current through testing Electrical characteristic(C-V， I-V analysis). The research status of high-k reliability is summarized in this article, while the constant voltage stress, constant current stress and characteristics of high-k breakdown will be concluded. Our research can help to realize the leakage current mechanism and SILC effect of HfO2, furthermore it can offer us direction on optimize the fabrication process. Generally, it is reported that the TDDB characteristics of ultra-thin HfO2 gate dielectrics depends on polarity as well as electric field strength of stresses. Keywor