直流反应磁控溅射制备的Mo掺杂TiO薄膜的光电特性.docVIP

------------------------------------------------------------------------------------------------ —————————————————————————————————————— 直流反应磁控溅射制备的Mo掺杂TiO2薄膜的光电特性 February [Article]物理化学学报(WuliHuaxueXuebao)ActaPhys.-Chim.Sin.2012,28(2),381-386doi:10.3866/PKU.WHXB201112123381 颜秉熙1罗胜耘1,2 2沈杰1,*(1复旦大学材料科学系,上海200433; 摘要:贵州民族学院理学院,贵阳550025)通过直流反应磁控溅射制备了不同Mo掺杂量的Mo-TiO2薄膜.用原子力显微镜(AFM)、X射线衍射 (XRD)仪、X射线光电子能谱(XPS)仪、紫外-可见(UV-Vis)分光光度计详细研究了Mo掺杂量对薄膜表面形貌、 晶体结构、元素价态及吸收带边的影响.用瞬态光电流和循环伏安法考察了不同Mo含量ITO/Mo-TiO2电极的 光电特性.结果表明:在TiO2薄膜中掺入的Mo以Mo6+和Mo5+两种价态存在;随着Mo掺杂量的增加,Mo-TiO2 薄膜的晶粒尺寸逐渐减小,晶格畸变增大,吸收阈值显著红移;薄膜的禁带宽度先减小后增大,在Mo掺杂量为 2.7%(n(Mo)/n(Ti))时禁带宽度最小;Mo掺杂量为0.9%的样品在氙灯下的光生电流最大,且随着所加阳极偏压 的提高光生电流并未呈现出饱和的趋势.此后随着掺杂量的提高,薄膜的光生电流开始下降,当Mo掺杂量达 到3.6%时,薄膜的光电流小于未掺杂的样品;说明适当浓度的Mo掺杂能够提高Mo-TiO2薄膜光电性能,光生 电流最大可达未掺杂的2.4倍. 关键词:光生电流;循环伏安;直流反应磁控溅射;二氧化钛薄膜;钼掺杂 O644中图分类号: PhotoelectricPropertiesofMoDopedTiO2ThinFilmsDepositedbyDC ReactiveMagnetronSputtering YANBing-Xi1LUOSheng-Yun1,2SHENJie1,* (1DepartmentofMaterialsScience,FudanUniversity,Shanghai200433,P.R.China;2CollegeofScience,GuizhouUniversityfor Nationalities,Guiyang550025,P.R.China) Abstract:NanocrystallineTiO2thinfilmsdopedwithdifferentconcentrationsofMoweredepositedby directcurrent(DC)reactivemagnetronsputtering.TheinfluenceofMoonsurfaces,crystalstructures,the valencestatesofelementsandtheabsorptionbandofModopedTiO2filmswerecharacterizedbymeans ofatomicforcemicroscopy(AFM),X-raydiffraction(XRD),X-rayphotoelectronspectroscopy(XPS),and Ultraviolet-visiblespectroscopy(UV-Vis).ToinvestigatethephotoelectriccharacteristicofITO(indiumtin oxide)/Mo-TiO2electrodes,aseriesofcyclicvoltammetryexperimentswereconducted.Theresults indicatethatanappropriateamountofMoatoms,observedasMo6+andMo5+byXPS,couldinhibitthe crystalgrowthofparticles,enhancethesurfaceroughnessoftheModopedTiO2thinfilm,andbringabout aremarkableredshiftoftheabsorptionspectra.Astheconcentrat