在矽晶或矽锗合金上成长金属和半导体薄膜.docVIP

PAGE PAGE 1在矽晶或矽鍺合金上成長金屬與半導體薄膜（IV）（Growth of metal and semiconductor thin films on Si and Si-Ge（IV））計畫編號：甲91-E-FA04-1-4執行期限：94年主持人：陳力俊（ljchen@mx.nthu.edu.tw）執行機構及單位名稱：國立清華大學材料科學工程學系 PAGE 6一、中文摘要本期間研究針對一、矽晶上穿透式電子顯微鏡動態變化觀察，二、利用金微粒成長奈米結構，三、在矽晶及矽鍺合金上成長奈米結構，各主題進行深入探討並獲得優良成果。關鍵詞：金量子點、超晶格、Ti原子、吸附與擴散、矽-鍺合金/矽異質結構，奈米點，奈米線，奈米環，金屬接觸， Si、Ge、Si-Ge AbstractThe research has been conducted on the study of metal contacts on Si and Si1-xGex/(001)Si. The emphases has been placed on the following topics,1. In-situ TEM observation of dynamical changes,2. growth of nanostructures mediated by Au particles,3. growth of nanostructures on Si and Si-Ge, Key Words：Au nanodot, superlattice, Si-Ge heterostructures, metal contacts, Si-Ge alloy, quantum dots, adsorption and diffusion, Ti, structure, light emitting iron silicide, crystallization, Ni-induced, high density currentI. Introduction As the miniaturization of devices continues, it is predicted that the physical limit of the silicon integrated circuits devices will be reached in about 10 to 15 years. The next 10 to 15 years will indeed be an exciting and challenging period. On the one hand, much ingenuity is required for the attainment of ever-smaller devices. On the other hand, innovative insights are demanded for the extension of the performance limit of IC devices. Recent announcement of for the successful production of 350 GHz Si-Ge devices by IBM foretells the progresses to come.As the critical dimensions for devices become smaller, it is becoming necessary to specify precisely the crystal structures, the interface morphology, and the shapes and sizes of individual features, and control at the atomic scale is essential. Achieving this level of control requires a detailed understanding of the fundamental processes, which take place during processing. For novel devices such as single-electron transistors or solid-state lasers, an understanding of the growth mechanism of nanosize islands, or “quantum dots,” allows these islands to