施主掺杂和na0.5bi0.5tio3对钛酸钡系ptcr居里温度的影响-influence of donor doping and na 0.5 bi 0.5 tio 3 on ptcr curie temperature of barium titanate system.docxVIP

摘要摘要本文主要研究了PTCR元件制造过程中Nb、La、Y三种施主掺杂和Na0.5Bi0.5TiO3（NBT）对元件居里温度的影响。Nb2O5掺杂摩尔比为0.118%—0.144%的范围内元件可良好半导化，随着Nb2O5掺杂增加，元件的居里温度略有下降（112℃+2℃）；La2O3掺杂摩尔比为0.097%—0.160%的范围内元件可良好半导化，随着La2O3掺杂增加，元件的居里温度略有下降（96℃+2℃）；Y2O3掺杂摩尔比为0.140%—0.191%的范围内元件可良好半导化，随着Y2O3掺杂增加，元件的居里温度略有上升（125℃+2℃）。三种施主掺杂都得到了明显的室温电阻率—掺杂摩尔百分比U型曲线。预烧之前添加NBT相对基础配方居里温度最多提高了20℃，预烧之后添加NBT相对基础配方居里温度最多提高了24℃，预烧前后添加NBT都会导致元件室温电阻率的升高。预烧后添加NBT相对于预烧之前添加更加集中作用于晶界，从而对居里点具有更高的移动效率。关键词：居里温度施主掺杂NBT施主掺杂和Na0.5Bi0.5TiO3对钛酸钡系PTCR居里温度的影响ABSTRACTABSTRACTEffectofdonorNb,LaandYandNa0.5Bi0.5TiO3(NBT)dopantsonelement’sCurietemperatureduringPTCRfabricatingprocedurewasdiscussedinthisstudy.AppropriateddopingmoleratioofNb2O5is0.118%—0.144%andelement’sCurietemperatureshowedadecrease(112℃+2℃)withincreaseofNbaddition.AppropriateddopingmoleratioofLa2O3is0.097%—0.160%andelement’sCurietemperatureshowedadecrease(96℃+2℃)withincreaseofLaaddition.AppropriatedopingmoleratioofY2O3is0.140%—0.191%andelement’sCurietemperatureshowedaincrease(125℃+2℃)withincreaseofYaddition.Meanwhile,alltheNb,LaorY-dopedelementsarewellsemi-conducted.Furthermore,thedependenceofresistivityatroomtemperaturewithdopingmoleconcentrationforalltheNb,LaorY-dopedelementsexhibitU-typecurve.IncomparisonwiththeCurietemperatureofthebasicformula,additionofNBTwithoutpre-sinteringcouldimproveelement’sCurietemperatureby20℃,andtheadditionofNBTafterpre-sintercouldimproveelement’sCurietemperatureby24℃.Meanwhile,theadditionofNBTwithpre-sinterorwithoutpre-sintercouldbothincreaseelements’resistivityatroomtemperature.ThefunctionofNBTafterpre-sintercouldbeconcentratedingrainboundariesandperformedhigherCurietemperatureshiftefficiencythanaddingNBTbeforepre-sinter.Keywords:CurietemperaturedonordopantsNBT施主掺杂和Na0.5Bi0.5TiO3对钛酸钡系PTCR居里温度的影响目录目录第一章绪论.....................................................................................................................11.1BaTiO3基PTC的现状及展望11.1.1BaTiO3系PTCR元件现今的研究成果21.1.2PTC热敏电阻器的发展状况及问题和展望41.2本文的研究内容和文章结构.......................................................