铜铟镓硒薄膜太阳电池缓冲层连续化大面积制备分析-analysis of continuous large-area preparation of buffer layer for copper indium gallium selenium thin film solar cell.docxVIP

technology and experience in the laboratory, research by the stationary solution to dynamic solution deposition mechanism, implying that the design of the equipment.The analysis to the design of some equipment sample and after extensive discussions, finally decided to adopt the overflow way design continuous preparation of CdS thin film devices, and complete equipment manufacturing. CdS preparation equipment manufactured relief way, through the exploration of equipment process, finally to achieve continuous preparation of CdS thin films, the technology conditions as follows: 3×10-3 mol/L (CH3COO) 2 Cd, 1.5 mol/L NH3·H2O, 0.45 mol/L SC (NH2) 2, water bath temperature was 60 ℃, deposition time of 10 minutes. Key words: CIGS; thin film solar cell; buffer layer; CdS 目 录 HYPERLINK \l _bookmark0 第一章 绪 论1 HYPERLINK \l _bookmark1 1.1 引言 1 HYPERLINK \l _bookmark2 1.2 太阳电池光电转换原理 2 HYPERLINK \l _bookmark3 1.3 太阳电池的种类和特点 3 HYPERLINK \l _bookmark4 1.4 CIGS 薄膜太阳电池 5 HYPERLINK \l _bookmark5 1.4.1 柔性 CIGS 薄膜太阳电池基本结构 5 HYPERLINK \l _bookmark6 1.4.2 柔性 CIGS 薄膜太阳电池的应用 7 HYPERLINK \l _bookmark7 1.5 CIGS 薄膜太阳电池研究进展 10 HYPERLINK \l _bookmark8 1.6 CdS 在 CIGS 薄膜太阳电池中的作用 11 HYPERLINK \l _bookmark9 1.7 本论文的研究思路及主要工作 12 HYPERLINK \l _bookmark10 第二章 实验仪器和表征方法14 HYPERLINK \l _bookmark11 2.1 实验主要试剂和仪器 14 HYPERLINK \l _bookmark12 2.1.1 实验主要试剂 14 HYPERLINK \l _bookmark13 2.2.2 实验仪器 14 HYPERLINK \l _bookmark14 2.2 物理性能测试和表征 15 HYPERLINK \l _bookmark15 扫描电子显微镜(Scanning Electron Microscopy, SEM) 15 HYPERLINK \l _bookmark16 X 射线衍射(X-Ray Diffraction, XRD) 15 HYPERLINK \l _bookmark17 2.3 光学电学性能测试 16 HYPERLINK \l _bookmark18 2.3.1 微控四探针测试仪 16 HYPERLINK \l _bookmark19 2.3.2 椭偏仪 16 HYPERLINK \l _bookmark20 2.3.3 台阶仪 16 HYPERLINK \l _bookmark21 第三章 小面积 CdS 薄膜的制备 17 HYPERLINK \l _bookmark22 3.1 引言 17 HYPERLINK \l _bookmark23 3.2 实验部分 19 HYPERLINK \l _bookmark24 3.3 结果与讨论