高级基准电压IC的设计.pdfVIP

[]CMOS [] A/D D/A PTAT; Gm ; VDD VDD IC VDD 3V 5V VDD OPAMPOSC 1.25V(Bandgap )/ TCs V1 V2 a1 a2 a1∂ V1/∂ T+a2∂ V2/∂ T=0 Vref=a1V1+a2V2 ∂Vbe/∂T=[Vbe-(4+m)Vt-Eg/q]/T m=-3/2Eg=1.12eVVbe=750mvT=300K ∂Vbe/∂T=-1.5mV/K Vbe ∆vbe=Vbe1-Vbe2 = Vt ln(NI0/Is)-Vt ln(I0/mIs) = Vt ln(mn) = kT/q ln(mn) ∂Vbe/∂T=Vt ln(mn) = (k/q)ln(mn)Ic (vbandgap) IC VBandgap Vbandgap=a1Vbe+a2(Vtlnn) Vtlnn Vbe a1 a2 ∂Vbe/∂T=-1.5mV/K∂Vt/∂T=k/q=+0.087mV/K a1=1a2lnn a2lnn(0.087mV/K)= 1.5mV/Ka2lnn=17.2 Vbandgap=a1Vbe+a2(Vtlnn) = Vbe+17.2 Vt =1.25V IC Vbe 600mV 800mV CMOS Bandgap IC CMOS p pnp diodepnp diode nwell p-sub,nwell pnp C IC GNDCB 2 P/N diode pnp E 10UM X 10UM=100UM IC rule IC rule poly length 0.1uMIC EPISIL 0.5UM