高频大功率vdmos场效应晶体管rlksblsm.docVIP

高频大功率VDMOS场效应晶体管 高频大功率VDMOS场效应晶体管 郎秀兰,刘英坤,王占利 (电子十三所,河北石家庄050051) 摘要:采用Mo栅工艺技术和n沟道增强型VDMOS结构,研制出了在95~105MHz,脉宽P=501as,占空 LtD=5%的条件下,输出功率PD≥600W,共源结构输出功率选600W的高性能VDMOSFET 关键词:高频高功率:M0栅工艺;VDMOSFET 中图分类号:TN386.1文献标识码:A文章编号:1003-353(2001)01-0034-03 HighfrequencyhighpowerVDMOSFET LANGXiu-Ian.LIUYing-kun,WANGZhan-li (Thet3ResearchInstitute.MinistryofII,Shijia~huang050051,China) Abstract:Ahighperformance,highpowerVDMOSFEThasbeendevelopedbyMogateandn- channelenhancementverticaldouble—diffusedtechnologies.Thedevicecandeliverontpntpowerof 600Wat95to105MHz,Pw=50~tsDF=5%inacommonsourcepush.pullconfigurat