TDI型CMOS图像传感器像素性能优化-微电子学与固体电子学专业论文.docx

ABSTRACT The market of CMOS image sensor (CIS) is now larger than that of charge-coupled devices (CCD) image sensor, principally because CISs have various advantages over CCDs, such as lower power consumption, lower cost, random access of image data, high-speed imaging and so on. Time-Delay Integration (TDI) image sensor is a special kind of linear array image sensor. Since it implement long exposure in the form of two-dimensional pixel array structure and dynamic scanning mode, it is better than the ordinary linear array image sensor. Therefore, the sensitivity and signal-to-noise ratio are both improved. They are widely used in the object detection field of low illumination environment, so characteristics like large photosensitive area, low dark current and zero tolerance for image lag are needed. This paper analyzes and improves the performance of the large size pinned four-transistor active pixel applied in TDI CIS in terms of charge transfer and dark current. The performance of charge transfer of large size pixels at N buried layer and transmission gate are optimized respectively. The performance of charge transfer is optimized in N buried layer includes two aspects. One is insert a P-type implant layer during the process of forming the non-uniform doped N buried layer. The other is to optimize the photodiode layout as U-shaped to improve the charge transfer efficiency of pixel. Compared with the traditional pixel, the charge transfer efficiency of the above two optimized methods were increased by 2 times and 3.3 times respectively. And the transfer time is also shortened by 26% and 30% respectively. The charge transfer efficiency was increased by 9.5 times both in the process and layout optimization. The structure of the transmission gate is optimized. During the period of charge transfer and integration time, applying different voltages on the TX1 to achieve the purpose of improving the charge transfer efficiency. Compared with the traditional pixel, the tra