（毕业设计论文）《Zr-N阻挡层薄膜的制备及表征》.doc

摘 要 随着集成电路工艺技术的不断发展，Cu逐渐取代传统的金属互连材料Al，而使器件获得了更高的运算速度和可靠性，但也不可避免地带来了Cu的扩散污染等问题。寻找合适的抑制Cu扩散的阻挡层材料多年来已成为Cu互连工艺研究中的热点课题。 在综述了互连的优势及面临的挑战、扩散阻挡层的制备工艺和发展趋势之后，作者在改变氮气流量、沉积偏压和沉积温度的条件下，采用磁控溅射技术在Si衬底上制备了25nm厚的Zr-N膜，在真空条件下对Cu/Zr-N/Si样品进行了600-800℃温度下的退火处理。用四探针电阻测试仪（FPP）、AFM 、XRD、SEMAES等分析测试方法对样品的形貌、结构与阻挡性能进行了分析。 分析结果表明，随着沉积温度的升高，Zr-N薄膜的结构由非晶态向晶态转变，晶粒的尺寸增大。退火后的FPP、XRD、AESZr-N薄膜的扩散阻挡性能，400℃下制备的Zr-N薄膜有很好的阻挡性能，可以稳定到650℃。N2分压从20%增加到25%，电阻率快速增高；溅射偏压不同，Zr-N的结构可由非晶态结构转变为纳米晶。纳米晶Zr-N阻挡层650℃退火1小时后仍能有效地阻止Cu的扩散。 关键词：磁控溅射ABSTRACT With the development of IC processing technology, copper metallization is taking the place of classical aluminum interconnect. Although copper metallization has promoted operation speed and reliability of device, contamination of Cu diffusion is inevitable. One crucial problem to solve in Cu metallization to find out the applicable diffusion barrier. In this study, our investigation focuses on the performance of Zr-N films as the barrier. zirconium nitride(Zr-N) thin film with 25nm thickness was grown on Si(100) substrates under various substrate temperatures in a rf magnetron sputtering system. Weve studied the impact of deposition conditions on the material characteristics and performance of the barrier. The optimal scheme of bringing out the barrier represents out ultimate target. It is found that the resistivity of Zr-N film increases rapidly when N2 flow ratio changes from 20% to 25%.Additionally, Zr-N film microstructure is very sensitive to the sputtering conditions. Zr-N films deposited at various substrate bias can produce amorphous and nano-crystalline phase. XRD and AFM results before annealing show the microstructure of Zr-N films vary from amorphous to crystalline phase and grain sizes increase with increasing substrate temperature. It is also observed that Zr-N film prepared at -200V bias and 400℃ has better diffusion barrier property and still performed well against Cu diffusion after being annealed under 650℃ for an hour. Key Word: Cu metallizati