IC Mask Design Training知识讲稿.ppt

* Exposure Tools (Contd) Shadow printing - Contact printing – The mask and the wafer are in direct contact - Proximity printing - The mask and the wafer are in close proximity * Exposure Tools (Contd) Projection printing - The mask patterns are projected on to the resisted-coated wafer many centimeters away form the mask - To increase resolution only a small portion of the mask is exposed at a time and the area is scanned or stepped over the wafer to cover the entire surface * Material Characterization (Contd) Wafer Shaping - the two ends are removed - the surface is grinded to to give the required diameter - one or more flat regions grounded along the length of the ingot - ingots are diamond sawed to give wafers * Material Characterization (Contd) - Slicing determines four wafer parameter Surface orientation Thickness (0.5-0.7 mm) Taper Bow - both the sides are lapped with a mixture of Al2O3 and glycerin * Material Characterization (Contd) - the damaged and contaminated regions are removed using chemical etching - polished – to provide a smooth and specular surface * Material Characterization (Contd) Crystal characterization - Crystal defects - Material properties * Material Characterization (Contd) Crystal Defects - Point defects - Line defects - Area defects * Material Characterization (Contd) Material Properties - Resistivity - Minority carrier lifetime - Trace impurities such as oxygen and carbon - Surface flatness - Slice Taper - Slice Bow * Epitaxial Growth Growth of crystal of one mineral on another to achieve same structural orientation Methods - Chemical-Vapor Deposition * Chemical-Vapor Deposition Also know as Vapor-Phase epitaxy Silicon Tetrachloride (SiCl4), Dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3) and Silane (SiH4) are used SiCl4 + 2H2 ? Si + 4HCl * Chemical-Vapor Deposition A competing reaction also takes place SiCl4 + Si ? 2SiCl2