硅中氧主要来源于熔融硅与石英坩埚的反应因此直拉硅单晶比区熔硅.PPT

金属有机化合物化学汽相沉淀(MOCVD)方式是采用处于液相状态的金属（Ⅱ、Ⅲ族）有机化合物同汽态的氢化物（V、Ⅵ族）作为沉积源原材料，以热分解反应的方式在衬底沉积、淀积形成外延薄层的一种方法。 按掺杂浓度 正外延：重掺杂衬底上生长轻掺杂外延层 反外延：轻掺杂衬底上生长重掺杂外延层 按外延生长方法： The process of Silicon Epitaxy is essentially a CVD* process used for depositing thin films of single-crystal silicon on single crystal silicon substrate and it is used extensively in the microelectronic and semiconductor industries.The requirements of the industry from this process are highly demanding, i.e., epitaxial silicon films must have an excellent thickness uniformity and excellent quality (minimum defects in the epitaxial layer). 气相外延