模拟电路分析与设计英pptch1.ppt

Ch1. Semiconductor Materials and Diodes 1.1 Semiconductor Materials and Properties Ch1. Semiconductor Materials and Diodes 1.1 Semiconductor Materials and Properties 1.1.1 Intrinsic Semiconductor 1. Silicon, germanium__single-crystal structure 1.1.1 Intrinsic Semiconductor 1.1.1 Intrinsic Semiconductor 1.1.2. Extrinsic Semiconductor 1.1.2. Extrinsic Semiconductor 2. boron+silicon=P-type semiconductor 1.2 The PN Junction 1.2.1 The Equilibrium PN Junction 1.2.1 The Equilibrium PN Junction 1. Depletion region(space-charge region)_PN junction 1.2.1 The Equilibrium PN Junction 3. Drift current IDR = diffusion current IDF _Balance 1.2.1 The Equilibrium PN Junction The procedure of forming pn the dynamic equilibrium of drift and diffusion movements for carriers in the silicon. In detail, there are 4 steps: Diffusion Space charge region Drift Equilibrium 1.2.2 Forward-Biased PN Junction Positive voltage is applied to P, forward-biased PN. 1.2.2 Forward-Biased PN Junction 3. The current-voltage (v-i) characteristic 1.2.3 Reverse-Biased PN Junction Positive voltage is applied to N, reverse-biased PN. 1.2.3 Reverse-Biased PN Junction 1.2.3 Reverse-Biased PN Junction 1.2.3 Reverse-Biased PN Junction 6. Junction capacitance Cj 1.2.4 PN Junction Diode 1. Diode__ has one PN junction in it 1.2.4 PN Junction Diode 2. Temperature Effect 1.2.4 PN Junction Diode 3. Switching Transient 1.3 Diode Circuits_DC Analysis and Models 1.3.1 Models 1.3.1 Models 2. Piecewise model 1.3.2 DC Analysis E.g.1.1 Determine the diode voltage and current for the circuit shown in figure, Assume 1.3.1 Models 3. Small signal model__AC model 1.3.2 DC Analysis (2) using the model analysis. 1.4 Diode Circuits_AC Equivalent Circuit 1.4.1 Sinusoidal Analysis E.g.1.2. Determine the output voltage in Fig. 1.31. Assume circuit and parameter of VPS=5V , R=2k?, Vr=0.6V ,and vi =0.1sinwt(V). 1.5 Other Diode Types 1.5.1 Solar Cell 1.5.5 Zener Diode 1. Symbol and I-V