电化学沉积CuInSe2薄膜的制备工艺及其光伏性能研究-材料学专业论文.docx

电化学沉积CuInSe2薄膜的制备工艺及其光伏性能研究-材料学专业论文.docx

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电化学沉积CuInSe2薄膜的制备工艺及其光伏性能研究-材料学专业论文

合层薄膜 。在 此基础 上发展了 结构新 颖的 上衬底型 CIS 薄膜 太 阳能电池 ,对 电 池的结构 和性能 进行 了研究, 结果表 明: 电池具备 一定的 光电 性能,相 对于同 结构电池 其开路 电压 更高,为 0.31V,电 池的光电 转换效 率为 1.9%。 关键词 :电化学沉积 ; CIS 薄膜 ;快速 硒 化退火; 上衬 底 型太 阳能电池 Study on fabrication of CIS electrochemical deposition thin films and their photovoltaic properties ABSTRACT Compared with most solar cell absorber layers, the absorption spectrum of semiconductor CuInSe2 (CIS) with a direct band gap of about 1.1 eV, matches better with the solar spectrum, indicat es that CIS is a nearly ideal absorber for thin film solar cells. CIS thin films are deposited by vacuum technology, which requires exorbitant equipments and have a low raw materials utilization rat e. And the production cost has not reached the expected value. By the electrochemical deposition, the materials utilization rate can reach up to 95% . In comparison with CIS thin films prepared by vacuum technology, the electrochemical deposition has emerged as an alternative cost-efficient method. In general, the method for CIS fabrication via electrochemical deposition is that one-step electrochemical deposition that provides all the components into the same electrolyte with a single step, then composition of the CIS precursor film is modified by high vacuum technology. There are few reports on the synthesis of CIS fabrication by a selenization technique in toxic H2Se vapor. In view of the above, we developed a green process for preparation of high quality CIS thin films. The effects of electrochemical deposition mechanism , annealing process, heat treatment time and temperature were investigated systematically. Furthermore, superstrate solar cells based on CIS thin films was fabricated by this process, the structure and property of solar cells have been investigated. The main research results obtained as follows: CIS thin films were synthesized by electrochemical deposition. The process of Cu-Se, In-Se compound impurity phases emerging, and the cause of Cu-rich, Cu-poor CIS t

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