高纯致密WO3陶瓷靶材的制备-材料工程专业论文.docxVIP

高纯致密WO3陶瓷靶材的制备-材料工程专业论文.docx

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高纯致密WO3陶瓷靶材的制备-材料工程专业论文

华 华 中 科 技 大 学 硕 士 学 位 论 文 II II Abstract WO3 film is a kind of significant function materials. The excellent photoelectric properties guarantee that it has potential applications in many fields. Many methods can be used to fabricate WO3 film such as vacuum vapor deposition method, sputtering method, deposition methods sol-gel method, etc. Sputtering method is a mature method which can be used to fabricate WO3 film of high purity and density. It has been widely applied in the industrial production. Large amount of WO3 target material will be consumed when Sputtering method is adopted to fabricate WO3 film, therefore there is a extensive market need for WO3 target material. Nevertheless, the report about WO3 target material fabrication is rare. There exit some defects including low density, impure components and. An obvious gap needs to cover to achieve the industrial application. It is of great value to study the techniques to fabricate WO3 target material of high purity and density. In order to fabricate WO3 target material of high purity and density, we prepare to do research from three aspects consisting powder making, shaping and sintering which are necessary to fabricate the perfect WO3 target material. The specific research contents are as follows: (1)The fabrication of WO3 powder of high purity, high sintering activity and fine pressing property; We choose homemade high pure tungsten oxide (=99.99%) as raw material and adopt the low-energy ball-milling method to prepare experimental powder in order to discuss the effect of Ball-milling crushing mechanism, process and transmitter on powder size, construction and purity. (2)Optimizing the press technology of WO3 ceramic; Mould press the WO3 powder under different pressure (To avoid inclusions, Carbide inlay mold of high hardness, high wear resistance whose main chemical composition is III III tungsten is used). Analyse the relationship between pressure and green density and its dispersion. Discuss the optimal p

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