电浆溅镀.PPT

簡報大綱 Substrate Temp. effect on the IrO2 Resitivity XRD patterns of IrO2 prepared under different OMRs Manufacturing methods Thin film Equipment Typical reaction Comments Al Magnetron sputter 25-300 C – standard 440-550 C – hot Al Ti and TiW Magnetron TiN Reactive sputtering Ti + N2 (in plasma) TTiN Cu Electroplating Cu2+ + 2e- TCu Applications of Sputtering ITO Sputtering (in-line) Transparent Electrode for STN, TFT…… ITO Sputtering (batch) Low-temperature Color Filter……… ITO Sputtering (roll to roll) Low-temperature plastic coating ITO/SiO2/PET…. In-Line ITO Design Vertical substrate orientation ( 85°) : low particle contamination Cathode design : high deposition rate, low resistivity ITO and metal Heater design : homogeneous substrate temperature distribution Flexibility : ITO and others (SiO2 , Cr, Mo, Ti, Ta,....) using the same architecture 4th ITO Sputtering System ? 4th Generation: Max. 750 x 950 cm ? Big Mag array: 8 ? Scan Mag. Cathode ? Target Dimension: 158 x 1092 cm Sputtering for Components ?應用產品決定 PVD 薄膜技術及設備 ?從可行性研究到生產 ?薄膜設備之設計及控制 (quality, niformity, repeatability….) ? Throughput 之考量 ?創新與突破 討論與展望 * Magnetron sputter deposition PVD -- (Sputtering deposition) 磁控濺鍍（Magnetron Sputtering） 為提高直流濺鍍法的沈積率，在靶材背面加上磁場是個有 效的方法— 電場與磁場的交互作用會使二次電子集中於靶材附近， 呈現螺旋狀的運動。 缺點:靶材耗損較快。 濺鍍系統粒子分佈 磁控濺鍍陰極靶材使用率比較 濺鍍過程 薄膜成長機制 Substrate 電漿如何造成沉積 磁控濺鍍基本原理 磁控濺鍍基本原理 濺鍍率 Sputtering Yield of Ar Sputtering Yield of Ar A1 Bias sputtering ? Sometimes bias sputtering of the wafer is desirable. This is done by reversing the electrical connections. ? One application would be for precleaning the wafer before the actual deposition. ? During this step, a controlled thickness of surface material is sputtered off the w