GasSi和含B光电子材料异质外延生长的理论和实验研究.docxVIP

北京邮电大学硕士研究生论文 北京邮电大学硕士研究生论文 摘要 THEORETICAL AND EX-PERIMENTAL RESEARCH 0N GaAs／S i HETEROEPITAXIAL AND BORON．INCORPORATED PHOTOELECTRONIC ^僵ATEIUALS AB STRACT The research work of this thesis was mainly supported by the sub—project one “Theory on heterogeneous materials compatibility and Key StructureTechnology Innovations for Monolithic Integrated Optoelectronic Devices” (Project No．2003CB3 149001)of the major project“Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications”，which is the State Key Development Program for National Basic Research Program of China (Project No．2003CB3 1 4900)． At present，with the rapid development of information technologies，optical communication technologies，which is the“nerve’4 of information society,have been more and more important．The focus of the current research works is on WDM and All—Optical Network，which is wish to combine HigIl-speed optical properties with Mature electrical characteristics，therefore，how to integrate Heterojunction semiconductor materials谢tll different Photoelectron characteristics，especially through integrate III／V semiconductor materials represented by GaAs and InP with Si by the method of large mismatch heteroepitaxy,have become the most significant research． This thesis did research on the strain and stress distribution of substrate and epitaxial layer in large mismatch heteroepitaxy,and several beneficial experiments Was carried out．The main work is listed as follows： 1．Established the strain and stress distribution models of lattice mismatch and thermal mismatch in large mismatch heterostructure，deduced the distribution formula of the strain and stress，which had been used to GaAs／Si heteroepitaxial．The result indicated that the stress of the GaAs Epitaxial laye