GaAs基量水声传感器工艺设计与性能测试-微电子学与固体电子学专业毕业论文.docxVIP

Fabrication Technology Design and Characters Measurements of GaAs Vector Hydrophone Abstract Micro／nano—electro—mechanic System(MEMS)has many merits，such。嬲 extreme miniaturization，low power consumption，high integrated level and SO on． They can complete tasks that large-dimension electro—mechanic system gall not achieve，and raise automatization，intelligentized ability and reliability to a new level by embedding in large system．The study of MEMS devices based on the piezoresistive effect of doped silicon has several ten years history with widely applications．Because of the relative low sensitivity and resistance variety d印肌deIlcy Oil temperature et al of the piezoresistive effect based on doped silicon，the uses of it are restrained under conditions such as accurate precision and high sensitivity． Based on the piezo-resistive effect of resonant tunneling structure(RTS)，design, process methods and measurement et al of GaAs vector hydrophone are studied in this paper．The works mainly contain three targets：calibration of the piezoresistive coefficient of RTS，GaAs bulk process methods and design，measurements of the hydrophone．By molecular beam epitaxy(MBE)technology,the GaAs／A1As／InGaAs double barrier RTS is grown on semi—insulating GaAs substrate，and the resonant tunneling devices are fabricated wim obvious negative differential resistance(NDR) effect．The meso-piezoresistive phenomena of RTS is measured,either by micro Raman—probe stress system，centrifugal machine-Agilent4 1 56C semiconductor characteristic analyzer system and／or jarring table·Wheatstone bridge solution circuit system，and the consistent largest piezoresistive coefficients：1 0‘9Pal are discovered (NDR region)；The control-hole technology and etch-stop technology of GaAs bulk process methods are studied too，and by control·hole technology,the basic hydrophone structure with four beam-block is designed and fabricated；At last，In Hangzhou Applied Acoustics Research Institute(7 1 5 institute)，the direai