GaN肖特基器件电学性质的模拟研究-学工程专业毕业论文.docxVIP

山东大学硕士学位论文ABSTRACT 山东大学硕士学位论文 ABSTRACT Gallium Nitride(GaS)based wide direct bandgap semiconductors have bec《)me the most important materials for hi曲temperature,high power,high frequency electronic devices as well as for light emitting diodes，laser diodes,ultraviolet photodetectors．GaN-based light emitting devices have a great prospect in saving energy． GaNobased semiconductor photodetectors will take the place of vacuum tube devices in ultraviolet detection area．The UV detection also has a great application background． To improve the property of GaN-based device，it is very important to establish a numerical simulation platform to analyze the electric property and optimize the structure of the device。The detail is as following： 1．simulating the electric property of the device丽tll interface layer of various 衄che豁： 2．simulating the electric property of the device and analyzing the effect of bulk layer by changing the thickness of bulk layer for血ed interface layer；, 3．simulating the electric property of the Schottky avalanche device without interface layer and validating the effect of bulk layer by changing the tbjclaless； 4．simulating the electric property of the Schottky avalanche device、】I，itll interface layer，and validating the effect of mterface layer further by comparing the conventional Schottky avalanche device without interface layer and the Schottky avalanche device with interface layer． Keywords：UV detector,Schottky,interface layer,bulk layer,tunneling，simulation, avalanche． Ⅱ 山奈大学硕士学位论文符号说明 山奈大学硕士学位论文 符号说明 A． 有效Richardson常数 mv。价带的有效隧穿质量 a 品格常数 ND 施主浓度 b 弯曲参数 ni 本征载流子浓度 层 能量 g 电子电量 E,c 导带能量 零偏电阻 最 禁带宽度 S 光敏面面积 品 结区峰值电场 T 绝对温度 风 价带能量 VI正向偏压 ， 电场强度 vD 扩散电势 Fi 镜像力 Vi 与镜像力有关的势能 厂 频率 vn n型半导体的费米电势 石㈣半导体的Dirac分布函数 W 耗尽层宽度 二∞金属的Dirac分布函数 Wm金属的功函数 G嗨 产生一复合增益 W：半导体的功函数 Idif 扩散电流 工 距离金属表面的距离 Ig呵 产生一复合电流 aS电子和空穴的碰撞电离系数 It．m 带间隧道电流 丫 能量倍乘因子 _厂 电流密度 6 绝缘层的厚度 ．／rN 隧穿电流密度 ￡o 真空介电常数 Z 隧穿电流密度 秒 a(mgmo)∽ k 玻尔兹曼常数 rc 隧穿到导带的载流子的隧穿几率 m 隧穿的有效质量 rv 隧穿到价带的载流予的隧穿几率 mo 静止电荷质量 k 有效载流予