一种源端由inas材料掺杂的病双栅隧穿场效应晶体管的研究-微电子学与固体电子学专业毕业论文.docxVIP

AbstractAbstract Abstract Abstract Tunneling field effect transistor(TFET)is proposed as the potential candidate of conventional metal-oxide-semiconductor field effect transistor(MOSFET)．The working mechanism of TFET is band—to-band tunneling mechanism，which is different from the drift-diffusion mechanism in MOSFET．From this point of view， this device has exponential relationship between temperature and the current． Therefore，the sub-threshold current of TFET doesn。t limited by the thermal distribution of carriers and the SS of this device can successfully breaks the limitation of 60mY／dec tha