硼在Si(100)表面引起原子结构特征.pdfVIP

Atomic structures of boron-induced protrusion features on Si(100) surfaces Zhenghui Liu, Zhaohui Zhang,∗ and Xing Zhu State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China (Dated: August 19, 2007) Abstract It is known that ultrahigh doping can be realized for boron on Si(100) substrates while boron- induced features on a heavily boron doped Si(100) surface cannot form any periodic structure. Here we demonstrate that boron-induced features actually result from the adsorption of boron-silicon addimers, owing to the underneath substitutional boron atoms at the second layer. Furthermore, more closely arranged boron atoms at the second layer make the energy of the (2 ×1) surface lower, and the whole second layer can be completely occupied by boron atoms while the surface is still (2×1) reconstructed. 1 Boron (B) is a widely used p-type dopant in silicon-based semiconductor technology and its particular properties in the silicon crystal have been interesting for up-to-date silicon devices [1–3]. Ultrahigh doping can be realized for B on Si(100) substrates with a volume concentration of up to 25% [4, 5]. The understanding of the related atomic process involves the B effects on silicon surfaces, since the B doping in silicon is inevitably related to the B segregation and B-induced atomic structures on silicon surfaces [6]. It has been fo