《材料科学与工程双语》第十二至十三次作业讲评解析.ppt

4-41 在20 ℃时1m3内含有1021个电荷载体的半导体的电阻率为0.1Ω·m，如果在电场为0.15V·mm-1时可传导1A的电流，试计算电导的平均漂移速度 ?=nq?=nqv/E, so, v=?E/nq= E/(nq?) =150/[1021*1.6*10-19*0.1]=9.375m/s ? 载流子的迁移率，其物理意义为载流子在单位电场中的迁移速度。 英文书: 12.11 (a) Calculate the drift velocity of electrons in germanium at room temperature and when the magnitude of the electric field is 1000 V/m. (b) Under these circumstances, how long does it take an electron to traverse a 25 mm (1 in.) length of crystal? Solution: (a) v =? E=0.38m2.(Vs-1)?1000V/m =380m/s (b) 25mm/(380m/s)= 6.6? 10-5s 12.14:(a) Calculate the number of free electrons per cubic meter for gold assuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3?107(Ω-m)-1 and 19.32 g/cm3, respectively. (b) Now compute the electron mobility for Au. Solution: n=1.5?(?/M)?NA= 1.5?[19.32?106(g/m3) ?197(g/mol)]?6.02?1023=8.86?1028 m-3 ? =n|e|?e So, ?e=?/[n|e|] =(4.3 ?107Ω-1m-1) ? [(8.86?1028 m-3)(1.6?10-19C)] =3.03?10-3 m2/V-s 12.38 The intrinsic electrical conductivities of a semiconductor at 20 and 100?C are 1.0 and 500 (Ω-m)-1, respectively. Determine the approximate band gap energy for this material. Solution: ln?=C－Eg/(2kT) so, ln?1=C－Eg/(2kT1), ln?2=C－Eg/(2kT2) ln?1- ln?2=Eg/(2kT2 )-Eg/(2kT1)=(Eg/2k)[1/T2 -1/T1)] so, Eg= (ln?1- ln?2)?2k ?[1/T2-1/T1] = (ln1- ln500)?2?8.62?10-5eV/K ?(1/373 -1/293K) =1.46eV 12.51 At temperatures between 775?C and 1100?C, the activation energy and pre-exponential for the diffusion coefficient of Fe2+ in FeO are 102,000 J/mol and 7.3?10-8m2/s, respectively. Compute the mobility for an Fe2+ ion at 1000?C. Solution: D=D0exp（-Qd/RT） =7.3×10-8exp[-102000/（8.314×1273）] =4.76×10-11m2/s ? =n e D/(k T) P390 =2×1.6×10-19C× 4.76×10-11m2/s ?(1.381?10-23J/K×1273K)= 8.7×10-10 m2/V-s ? =n e D/(k T) P390 =2×4.76×10-11m2/s ?(8.62?10-5ev/K×1273K)=8.7×10-10 m2/V-s 思考题 4-