微纳光电子材料与器件工艺试验LaboratoryofMicro.pdf

《微纳光电子材料与器件工艺实验》 Laboratory of Micro- and Nanofabrication for Electronic and Photonic Devices 实验3 刻蚀 Lab 3 Etching Lecturer: Xing Sheng Time: 2017-11-18 Place: Weiqing Building 113 1. Objectives In this lab, we introduce two different etching methods: the reactive ion etching (RIE) method to dry etch materials (silicon, SiO , photoresist), and wet etching 2 method to remove SiO films on Si. We will etch silicon, SiO and photoresist 2 2 respectively by SF , CHF and O plasma, observe and measure the etched patterns. In 6 3 2 addition, we will etch SiO films on Si by using buffered hydrofluoric acid (BHF), 2 and observe the surface change from the hydrophilic state to the hydrophobic state. 2. Materials and Equipments silicon pieces with SPR220-v3.0 photoresist patterns ( 3) silicon pieces with SiO layer on top (10 pieces, by PECVD, thickness ~ 500 nm) 2 petri dish, 4 inch ( 10) plastic beakers ( 2) gloves (2 boxes) face masks (20) cleanroom white papers (1 bag) wafer tweezers (5) buffered hydrofluoric acid solution (1:6) (also called BHF or BOE) DI water bottle acetone bottle alcohol bottle safety gowns for HF etching (face masks, ap