硅超大规模集成电路工艺技术—理流论、实践与模型课后习题答案.docVIP

1.2. Assuming dopant atoms are uniformly distributed in a silicon crystal, how far apart are these atoms when the doping concentration is a). 1015 cm-3, b). 1018 cm-3, c). 5x1020 cm-3. ? Answer: ? The average distance between the dopant atoms would just be one over the cube root of the dopant concentration: ? a) b) c) ? 1.3. Consider a piece of pure silicon 100 μm long with a cross-sectional area of 1 μm2. How much current would flow through this “resistor” at room temperature in response to an applied voltage of 1 volt? ? Answer: ? If the silicon is pure, then the carrier concentrat