金催化化学气相沉积法制备bi2te3纳米线论文-凝聚态物理专业论文.docxVIP

优秀毕业论文 精品参考文献资料 研究生优秀毕业论文 晶体，而在有金纳米颗粒催化的条件下所制各出的纳米结构则为碲 晶体，而在有金纳米颗粒催化的条件下所制各出的纳米结构则为碲 化铋的晶体；(2)载气流量主要影响碲化铋纳米线的最佳沉积区；(3) 反应温度主要通过影响纳米线的生长速度从而决定了纳米线的生长 取向性；(4)反应时间主要影响了纳米线的纵向的生长尺寸。 在碲化铋纳米线的可控制备基础上，我们希望能够进一步构筑 出碲化铋纳米器件并测试其电输运性能，并在低温测试条件下研究 碲化铋纳米线表面态的相关特性。 关键词：金催化，化学气相沉积，碲化铋，纳米线 万方数据 ABSTRACTBi2Te3 ABSTRACT Bi2Te3，as a VⅥgroup element compound semiconductor,arouse enormous interest because of itS unique thermoelectric effect，and trigger a new round of research upsurge more due to its three—dimensional topological insulators structure．There is electron spin-orbit coupling in the material’S surface state，which makes it could become ail excellent material for the preparation of spinlronic devices with low energy consumption at room temperature．As the larger surface—to-volume ratio， the surface state is dominant in the nanoscale topological insulators， resulting in the better surface and interface effect．At present,it is hard to synthesis high quality samples of the Bi2Te3 nanowires in the laboratory, which constrains the progress of research on the surface state of Bi2Te3． Therefore，in this thesis，we synthesized Bi2Te3 nanowires by gold-catalyzed chemical vapor deposition，and then we explored the influence of gold nanoparticles and macroscopic experimental conditions on the growth of Bi2Te3 nanowires． 乃e main research results are as follows： 1．At first，gold film(3 nm)were deposited on the100silicon wafer by thermal evaporation．The nanowires were synthesized on the silicon wafer by using the high purity bismuth telluride powder as evaporation source．Bismuth telluride nanowires with high purity,good III 万方数据 crystallinity crystallinity and stoichiometric ratio of 2：3 were synthesized at 420。C， 60 SCCM argon gas were introduced to the tube for 4．5h．After the reaction，the furnace Was cooled to room temperature under vacuum． 2．The effect factors，such as gold nanoparticles and macroscopic experimental conditions(carrier gas flow rate，reaction temperature and reaction time)