sscvd制备zno薄膜材料物理与化学专业论文.docxVIP

A b A b stra Ct A b s t r a C t Z in e ox ide (Z n O ) 15 on e of th e m o st Prom isin g sem ieon du ctor m aterials for u ltrav iolet laser at room tem Perature du e to its w ide direet band gap (E g= 3 .37eV ) an d larg e e x c ito n ie b in d in g e n e rg y o f 6 0 m e V. Z n O film s are e o rn 刀n o n ly g ro w n in P o lar c (0 02 ) d irectio n . T h e inten sity o f lu m in eseen ee o f p olar Z n O film s 15 n ot h igh en ou gh ， w h ile n o n P o lar wn rtz ite Z n O film s P ro v id e a P ro m isin g g o o d P erform an e e o f lum in e se e n e e 。In th is th e sis，n o nP o lar 个 b o rie nie d Z n O film s h av e b e e n P reP are d o n 5 1(100) by sin gle source ehem ical v ap or dePosition (S SC V D ) u sing a new k ind of solid PrecUrs or(Z nxo yC zH *).Th e gro、城h m ode 、strueture an d Ph otolum in eseence of n onPolar Z n O fllm s w ere s加d ied in detail.T h e m ajor results are listed as follow s: 1 . T h e g ro wt h m o d e an d stru e tu re P ro P e rtie s o f Z n O film s h av e b e en stu d ie d b y X 一ray diffr aetion (X R D )，sean-n in g eleetron m ieroseoP e (S E M ) an d atom foree m ieroseoP e (A F M ). T h e resu lts sh ow that the Preeursor temP erature eou ld im P act th e 妙 ality o f Z n O film s b u t no t th e g ro wt h m o d e ，Wh ile th e g ro wt h te m p e ratu re c an e ffi e ie n tly im P ro v e b o th 盯 o wt h m o d e an d stru ctu re o f Z n O film s . In th is the sis，g o o d n o nP o lar Z n O film s w ith 个 b a x is o rien tatio n w e re P re P are d wh e n P re c u rso r te m P e ratur e w a s 2 1 0 aC an d gr o wt h te m P e ratu re w a s 3 5 0 oC . 2 ，Th e e ffe e t o f ann e a lin g te m P e rat ur e o n b o th q u a lity an d P h o to lu m in e sc en c e o f n o nP o lar Z n O film w a s a lso stud ie d . Th e e o n c lu sio n 15 : it，5 ann e a lin g te m P e ratu re that in d u e e s re e ry sta