光学元件表面真空等离子体处理与工艺研究光学工程专业论文.docxVIP

光学元件表面真空等离子体处理与工艺研究光学工程专业论文.docx

  1. 1、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。。
  2. 2、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  3. 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
  4. 4、该文档为VIP文档,如果想要下载,成为VIP会员后,下载免费。
  5. 5、成为VIP后,下载本文档将扣除1次下载权益。下载后,不支持退款、换文档。如有疑问请联系我们
  6. 6、成为VIP后,您将拥有八大权益,权益包括:VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
  7. 7、VIP文档为合作方或网友上传,每下载1次, 网站将根据用户上传文档的质量评分、类型等,对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档
查看更多
光学元件表面真空等离子体处理与工艺研究光学工程专业论文

Research Research on Vacuum Plasma Processing for Optical Surface Discipline:Optical Engineering Student Signature: 西%伊丫 Supervisor Signature: 山协W广俨 才吼。蹦~ Abstract Compared with traditional polishing methods,the plasma polishing technology has advantage of processing effect,and has been widely applied in the field of microelectronics and optical manufacturing.According to the current specific practical problems in the optical element,vacuum plasma technology is applied to the manufacturing ofUltra-smooth Surface.It Can rapidly remove the cutter mark of the formation in precision CNC grinding process and remove effectively the surface defects and sub-surface damage of the optical material,and reduce the optical losses of optical element by the plasma active radicals and ions of the chemical reaction. Based on the existing polishing experiment facility,capacitive coupled plasma source of RF discharge method Was designed.The plasma source could realize discharge.Langmuir probe was applied to diagnose plasma characteristics.The influence of processing parameters (RF power,working pressure,the gas flow rate of the Argon,the gas flow rate of the Oxygen and the gas flow rate of the CFO on surface roughness and etching rate were studied by the technology of capacitive coupled plasma and inductively coupled plasma.Finally,the chemical removal mechanism ofthe vacuum plasma on the surface ofquartz is preliminarily discussed. The research suggests that the optimal parameters in the ICP-98A process experiment are RF power of 180w,Argon flow rate of 70seem,Oxygen flow rate of 10seem,CF4 flow rate of 30 seem and working pressure of 2Pa and etching time of one hour on quartz surface.By RF bias,surface roughness of quartz is improved and reduced to 1.1 9nm on these parameters.Also, maximum etching rate of 1 53.33nm/h has been recorded.Compared wiⅡl the physical sputtering plasma etch rates is obviously improved.The profile accuracy of quartz surface is improved by O.32X to 0.08X

您可能关注的文档

文档评论(0)

131****9843 + 关注
实名认证
文档贡献者

该用户很懒,什么也没介绍

1亿VIP精品文档

相关文档