多晶硅铸锭内嵌杂质引发热致应力的数值分析固体力学专业论文.docxVIP

ⅢY ⅢY ㈣3 眦1 Ⅷ0 Ⅲ9 眦4 ¨¨¨●I 帅8 摘要 多晶硅因其较高的能量转化效率，以及与单晶硅相比低的生产成本而在光伏太阳能电池产 业得到日益广泛的使用。本文对制造光伏太阳能电池用多晶硅锭中的主要硬质夹杂SiC、Si3N4 引起的热致应力进行数值分析。首先用晶体生长软件CGsim模拟定向凝固获得铸锭凝固初始温 度场及夹杂分布特征。结果表明，两种夹杂主要分布在硅锭上表面下的小区域内，基本处于 1685K至1645K温度区间。再基于此用有限元分析软件ANSYS分别分析这两种嵌于硅基体内 的夹杂在硅基体内引起的热致应力。夹杂颗粒模型形状设计依据其实际形状特征。由于SiC与 硅均为立方结构，SiC夹杂影响可处理为各向同性；对于六方结构的SiaN4夹杂，通过对弹性矩 阵的坐标转换考虑了其力学性能的各项异性。结果表明，多晶硅锭由1685K降至室温的过程中， 夹杂引起的最大热致应力SiC颗粒约为16MPa，Si3N4颗粒在13—21MPa之间，SiC团簇约为 15MPa，多颗粒在18—21MPa之间。基于此，计算出多晶硅锭内最小失稳临界裂纹尺寸在 286-,676弘m之间，小于夹杂体的尺寸，因此在铸锭冷却过程中夹杂引起的裂纹发生可能性较大。 本文对C、N杂质引入的可能途径也进行了分析，并给出了降低杂质含量的工艺建议。 关键词：多晶硅，夹杂，热致应力 万方数据 AbstractPolycrystalline Abstract Polycrystalline silicon is widely used in photovolmic solar cell industry,because of its high energy conversion efficiency,and lower cost of production compared with monocrystalline silicon．A numerical analysis was performed to investigate the thermally-induced stress caused by SiC and Si3N4， the main hard inclusions in polycrystalline silicon ingot used in fabricating Photovoltaic solar cells． Firstly The initial temperature field and impurities(SiC，Si3N4)distribution after solidification were obtained through the simulation of directional solidification of polycrystalline silicon ingot by using the crystal growth software CGsim．It shows that,the two inclusiom are located in small areas beneath the upper surface of silicon ingot．Then based on it,the thermally-induced stress was studied caused by these two kinds of hard inclusions embedded in silicon matrix by using the finite element analysis software ANSYS．Model shape was designed in terms oftrue shape ofthe inclusion particles． Cause SiC and silicon are all the cubic structure，the action of SiC inclusion carl be treated as isotropy； For Si3套“inclusion with hexagonal stmcture，anisotroW of mechanical properties were considered through the coordinate transformation ofthe elastic stiffness matrix．It indicated that,in the process of cooling of polycrystalline silicon ingot from 1 685K to room temp