单晶铜丝在半导体器件封装中的打线键合性能研究材料加工工程专业论文.docxVIP

兰捌矍三查堂堕主兰垒堡苎 兰捌矍三查堂堕主兰垒堡苎 塑薹 Evaluation of Bondability and Reliability of Single Crystal Copper Wire Bonding in Semiconductor Packaging Abstract Copper-based interconnect is ail emerging Send in microeleetronics packaging．Some studies have shown that copper wires may serve as a viable，cost·effective alternative to gold in some hi吐一end，ball and wedge bonding applications．This study is intended to evaluate the bondability and reliability of single crystal copper wire bonding．Mechanical properties such as break load and elongation 0f single crystal copper wires are characterized．After annealing, the copper wires are bonded on gold(1-2 micron thick)and aluminum(2 micron)surface,s without gas protection．Both ball bonding and wedge bonding are performed．Wire pull and ball shear strength are measured．Failure modes of the failed samples are discussed．The intermetallic compounds(IMCs)between copper and gold and between copper and aluminum are identified on the fractured surfaces by EDAX．Optical and SEM microscopy on cross—sections are conducted to inspect the morphology of IMCs．In addition，some specimens are annealed at a high temperature for 500 hrs in order to investigate che effect of thermal aging on wire bond reliability．After thermal aging,wire pull and ball shear tests are performed and the test results are compared with those without thermal a西ng．Optical and SEM microscopy on CROSS—sections are also conducted to inspect the changes of 1MCs due to thermal aging． From the present study．it is found that single crystal copper wires can be bonded on the gold pad and the aluminum pad by thermosonic ball bonding and wedge bonding without gas protection．Cu3Au and AuCu IMCs are found at the copper／gold interface while CuAl2 is lI 兰型堡三查堂堡主堂堡丝塞——————————————————里 兰型堡三查堂堡主堂堡丝塞——————————————————里 found at the copper／aluminum interface．The wire pull strength and ball shea