地址映射算法.doc

[键入文字] 基金项目：本文得到国家自然科学基金（No.资助 一种MRAM仿真系统的设计实现 吴非1,2 朱铭1 黄海涛1 1华中科技大学光电国家实验室，武汉 430074 2信息存储教育部重点实验室，武汉 430074 (wufei@mail.hust.edu.cn) Design and Implementation of an MRAM Simulator Wu Fei1,2 Zhu Ming1 Huang Haitao1 1 (Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074) 2 (Key Laboratory of Data Storage Systems, Ministry of Education of China, Wuhan 430074) Abstract With the rapid development of computer technology, the requirements of high density, high read and write speed, high efficiency, high reliability are raised for main memory. In such a situation, the defects of the traditional memory are gradually exposed. A new generation of memory is needed in order to adapt to the development and requirement of technology. MRAM is termed for Magnetic Random Access Memory. MRAM has the advantages of high read and write speed like SRAM, high integration density like DRAM and nonvolatile property like flash memory. MRAM has a good performance compared with traditional memory. In order to study the performance of MRAM as main memory, and the possibility to be an alternative for DRAM memory, an MRAM simulator, composed of trace generator, MRAM controller and MRAM memory is designed and implemented according to the characteristics of MRAM. MRAM simulator receives read and write requests from CPU, schedules them according to the address mapping policy, completes them on MRAM cells. Finally the statistical results of the simulator are analyzed. The results of MRAM simulator show that, taking advantage of MRAM, good response time and bandwidth can be achieved when MRAM is used as main memory. It can be expected that MRAM will become an ideal substitute of the memory. Key words Magnetic Random Access Memory; Non Volatile; Address Mapping; Simulator 摘要 计算机科学技术日新月异的发展，对存储器的集成度、读写速度、可靠性等方面提出了更高的要求。在这种形势下，一些传统存储器的缺陷逐步暴露出来，需要新一代存储器适应技术的发展和要求。MRAM是磁阻式随机访问存储器(Magnetic Random Access Memory)的简称。与传统的存储器相比，MRA