BCV27;BCV27D87Z;中文规格书,Datasheet资料.pdfVIP

B C V 2 7 BCV27 C E SOT-23 B Mark: FF NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V 3 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous