VNS1NV04DPTR-E;VNS1NV04DP-E;中文规格书,Datasheet资料.pdfVIP

VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance(1) RDS(ON) 250mΩ Current limitation (typ)(1) ILIMH 1.7A Drain-Source clamp voltage(1) VCLAMP 40V 1. Per each device. SO-8 ■ Linear current limitation ■ Thermal shutdown Description ■ Short circuit protection The VNS1NV04DP-E is a device formed by two ■ Integrated clamp monolithic OMNIFET II chips housed in a ■ Low current drawn from input pin standard SO-8 package. The OMNIFET II are ■ Diagnostic feedback through input pin designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of ■ ESD protection standard Power MOSFETs from DC up to 50KHz ■ Direct access to the gate of the power mosfet applications. Built in thermal shutdown, linear (analog driving) current limitation and overvoltage clamp protects ■ Compatible with standard power mosfet the chip in harsh environments. ■ In compliance with the 2002/95/EC european Fault feedback can be detected by monitoring the