BSS138PS,115;中文规格书,Datasheet资料.pdfVIP

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage Tamb = 25 °C - - ±20 V ID drain current Tamb = 25 °C; [1] - - 320 mA VGS = 10 V R drain-source on-state T = 25 °C; [2] - 0.9 1.6 Ω DSon