侧面粗化提高GaN基LED出光效率研究-Core.PDFVIP

EMICONDUCTOR OPTOELECTRONIC Vol. 32 No.3 June 2011 GaN LED 邓 彪, 刘宝林 ( , 361005) : 通过对传统结构LED 出光分析, 提出采用侧面粗化来提高GaN 基LED 出光效率 的方法,使用蒙特卡罗光 追踪方法对器件出光效率进行了模拟结果表明: 粗化侧面为三角状 底角为55时出光效率最高, 随机粗化可以获得比固定角度粗化更高的出光效率, 同时降低材料的 吸收系数可以提高LED 的出光效率, 在吸收系数为10/ cm 时, 经过粗化后的LED 出光效率可以 达到46. 1% 模拟结果证明侧面粗化可以较大地提高LED 的出光效率 : GaN ; ; : T N312. 8 : A : 1001- 5868(2011) 03- 0352- 04 Enhancement of Photon Extraction Efficiency of GaNbased LED by Lateral urface Roughening DENG iao, LIU aolin (Department of Physics, Xiamen University, Xiamen 361005, CHN) Abstract: y analyzing the light output of conventional LED, a method of lateral surface roughening was proposed to improve the extraction efficiency of GaNbased LED and Monte Carlo photon tracking method was used to simulate the extraction efficiency. The simulation results show that when the lateral surface is triangularshaped, the extraction efficiency of 55 rough angle reaches the highest, and random roughening can get higher efficiency than stable roughening angle. Also, reducing the absorption coefficient of the material can enhance the extraction efficiency of LED highly, and when the absorption coefficient is 10/ cm, the extraction efficiency of lateral surface roughening LED can get 46. 1% . Key words: GaNbased LED; photon extraction efficiency; lateral surface roughening 0 GaN 2. 4, 1.0, 24. 5, , GaN LED LED, [ 1] , , GaN LED , , [ 2] 80% , , , LED , :2010- 12- 28. [ 35]