关于PMOS辐照传感器的模拟研究-微电子学与固体电子学专业论文.docxVIP

AbstractAbstract Abstract Abstract The existence of space radiation environment could damage the device，SO it is important that monitor the radiation doses real-time．A variety of factors affect the radiation sensitivity, stability,accuracy of PMOS radiation sensors，including the device structure，process conditions，applied electric field，ete． According tO the two different models of oxide charge for PMOS radiation sensors after irradiation，and calculation results show that the model that satisfied first-order kinetic equation is agree谢t11 the experiment datas well，and Can be applied to a wider range of radiation does，then create a single gate PMOS radiation sensor model considering total dose effects，then calculation and analyze the impacts of the relevant parameters including the gate oxide thickness，channel doping concentration on threshold voltage shifts．The results show that gate oxide thickness is a major factor to induce the threshold voltage shift．In addition, MEDICI software simulate and analyzes the other factors to affect the radiation effects of a single dielectric gate PMOS radiation sensors，the results show that totaJ dose，bias conditions， dose rate，temperature，annealing，and other factors have effect on the sensitivity of PMOS radiation sensors．On positive bias conditions，the threshold voltage shifts of single dielectric gate PMOS radiation sensor is largest,and the sensitivity is highest；the lower the dose rate， the larger threshold voltage shifts wiⅡl the same total dose；the interface trap charge formed in the Si／Si02 will compound through thermally or tunneling electron for single dielectric gate PMOS radiation sensor,that result in the occurrence of annealing and affect the measurement accuracy． Study and simulate the radiation effects for the dual dielectric gate PMOS radiation sensors，the result show that the sensitivity is higher than the single dielectric gate PMOS radiation sensors，and the dose rate dependence is small，almost no annealing，the st