硅铝结构热堆红外探测器-微电子与固体电子学专业论文.docxVIP

摘要摘要 摘要 摘要 本文介绍了一种采用MEMS技术制造的封闭式薄膜SgAl结构红外热堆探测 器。这种直流响应的传感器特点是低功耗、低成本、可在室温温度下工作。热电 堆大小为2．1×2．1mm2，吸收区面积勤．9X0．9mm2，由40对硅铝热电偶组成。 论文主要从设计、制作及测试等几个方面对热电堆探测器进行研究探讨。通过测 试实验测得探测器的响应率为15．36V／W，探测率为2．577x107 cmHz”2W～，时间 常数为39．5ms，直流电阻为29．9KQ。 同时，论文对探测器工作状态进行了比较完整的热理论分析。由于传感器接 受热辐射时，热堆薄膜上热量无法均匀分布，常用的集总热容模型分析方法不适 用于探测器。采用二维稳态分析方法，比较准确地得到了传感器上湿度分布信息。 从而优化了探测器设计参数。实验证明，器件测试结果与分析方法得到的结果吻 合。 硅铝结构的薄膜热电堆采用半导体集成电路工艺和微机械加工工艺制造。支 撑硅膜采用KOH各向异性腐蚀和Si—Si3N4／Si02自停止腐蚀技术制备。支撑硅膜 厚度大约5000A左右，可以有效地降低器件的热导，而不影响器件电学特性。 冷端和热堆条上增涂反射层，可以改进热堆器件设计。反射层通过反射和向 环境传导冷端吸收的热量，降低和稳定冷端温度。该设计有效地增大了器件的性 能参数，改善系统的抗干扰能力。论文通过实验证明该设计的合理性和可行性。 制备质量好，性能高的支撑硅膜对器件有重要的意义。常用的Si02薄膜不 可避免的会产生很大内应力。当二氧化硅与浓硼掺杂的硅膜结合在一起时，其内 应力会使处在张应力下的硅膜产生压应力，并导致界面的塑性变形。热堆器件通 过si3N4／Si02结构进行应力补偿。最后，论文结合微机械器件，对二氧化硅薄膜 内应力及相应采取的消除应力措施进行了研究。 AbstractAbstract Abstract Abstract A MEMS based thermopile infrared sensor has been developed using Polysilicon／Ahiminum．This kind of detectors were characterized as low power consumption，lOW cost，room temperature operation，and DC response．The 2．1× 2．1mm2 thermopiles with 40{unctions，and 0．9×0．9 lynn2 absorbelarea．have been developed and testeel．In air a￡room temperature．the responsivity was measured at 15．36V／W The corresponding D’was 2．577x 10 7 emHz“2W1．time constant was 39．5ms．and DC resistance was 29．9K0。 In the designing of the thermopiles，a comprehensive heat transfer analysis was peroformed to optimize the sensor’s design．Two-dimensional steady state analysis has been completed which provided accurate temperature profile information on the sensor and agreed well with experimental results．The heat transfer model also illustrate the weakness of the popular lumped heat capacity model when the sensor was driven by a radiation source that was not evenly distributed on the abSOrber membrane． The thermopile fabrication process combined MEMS technology with semiconductor 1C processes．The silicon membrane was fabricated using KOH anisotropic etching and Si·Si3NdSi02‘etch—stop’process．The final silicon membrane w