过渡族金属掺杂ZnO薄膜的晶体结构、磁性能和光学性质研究-材料学专业论文.docxVIP

摘要摘要 摘要 摘要 采用电子束溅射法制备了不同工艺条件的过渡族金属(Fe、Co、Cu)掺杂 znO薄膜。通过对样品薄膜的结构分析，系统研究了在不同的工艺条件下如衬 底类型、衬底温度、氧分压、退火温度，以及cu掺杂含量对薄结晶状况的影响， 找出薄膜结构最佳工艺参数，获得沿c轴高度择优取向的高质量znO薄膜。我 们采用原子力显微镜(AFM)方法观察薄膜的显微结构，利用所得的图象信息 对薄膜的晶粒结构、晶粒取向、表面形态平整度等进行分析讨论，认为400℃的 衬底温度对硅衬底薄膜是合适的，与结构分析的结果一致。通过对薄膜磁性能 的分析和研究，我们得出一些有意义的结果：适量过渡金属离子Fe、Co掺杂的 ZnO薄膜，在室温下具有铁磁性，而在此基础上掺入少量的Cu离子能改善薄膜 的磁性。掺Cu量有个最佳值，而且结构最好的薄膜磁性不一定最好。另外，我 们还对薄膜光致发光性质进行了分析和研究，结果表明：纳米结构zn0薄膜的 紫外发光来源于带间激子的辐射复合发光，PL谱的带边发射峰发生蓝移是由于 Fe、Co、Cu对Zn的替代使薄膜粒子的尺寸减小，使薄膜的有效带隙增宽；zn0 薄膜的红色发光，一方面是znO颗粒尺寸的减少，带间的激子发射峰越来越弱 直至猝灭，另一方面主要是与ZnO晶格中的O空位有关，由深能级复合发光引 起红光发射。 关键词：ZnO薄膜：掺杂；电子束溅射；磁性；光致发光 ABSTRACTABSTRACT ABSTRACT ABSTRACT We have fab—cated ZnO films doped with trans．tion．metal Fe，Co，Cu in d讯奄rent conditions by using electron beam transpiration method．By anaIyzing their XI①spectra，we have systemly discussed t}le crystal in difIcrcnt conditions．such subStrate types，substraIe temperature，di彘陀nt o!，Ar ratio K，annealing temperaturc aIld Cu coments．We have found the beSt、vays optimize the gro叭h of quality ZnO films a11d got hi酿ly c．a)(is oriemed Zn0 films．The microstructures ofthe右lms were Observed by AFM．ARcr analyzing me crystal stmcnIres，me crystal仃opism and the surface confofnlatiOn natness，、ve folllld t}Ie result that廿1e sub她Ie temDe咖ure of 400℃is ideal for silicon substrates，which confo丌ns the result of the structu陀analyse．Bv analyzing the magnetism of ZnO nlms，we found that the films appropriately doped with Fe，Co ions have magnetism砒roOm科nperature and the‘r magnetism be impro、，ed by doping 0ther Iittle Cu ionbut it is certain that the ofCu is hi2heLthe fiIm has magnetism，so it has the best ofCu．MoreoveL me films which have best crvstal stmctures may not have tlle best magnetism．wb aIso have analyzed the photoluminescence(PU of some ZnO films，it tums that the emission of u1“_aviolet lim comes疔om the mdiative recombination of excitons within nano-crys诅l energy band—gap，arld me PL peaks move to smaller wavelength because Zn substituted by Fe，Co，and Cu，which the size of