具有非线性电流-电压特性的CaCu3Ti4O12功能薄膜分析.pdfVIP

ABSTRACT CaCu Ti O （CCTO ）has extraordinarily high dielectric constant and strong 3 4 12 stability over a wide temperature range from 100 to 400 K, and also has remarkably nonlinear current-voltage characteristic. So CCTO is considered as a very promising material for application in microelectronics, especially in capacitive components and varistors. In this work, CCTO precursor solution was prepared by sol-gel method at room temperature, then the prepared CCTO solution was span on the Pt/Ti/SiO /Si substrate, 2 o After baking at 350 C for 5 minutes on the heating plate，the samples were annealed in furnace finally. Varying the times of spin-coating and annealing temperatures, property and morphology of different samples were then characterized using X-ray diffractometer, field emission scanning electron microscope and semiconductor parameter analyzer in order to obtain the optimal condition for preparing the thin films. For the purpose of reducing the cost, and considering the compatibility with very large-scale integrated circuits, the experiments of preparing CCTO thin films on silicon substrate were also taken. Because oxygen atoms of CCTO would be captured by Si substrate in the annealing process, the CCTO can not crystallize. Therefore, ZnO layers were first deposited on Si substrate to obtain Si/ZnO/CCTO samples, then the microstructure and I-V property of composite films were determined. For the Pt/Ti/SiO /Si substrate, the thesis put forward two testing modes of I-V 2 property. And the threshold voltages (V ) of each sample obtained by two modes