考虑工艺波动和散射效应的纳米级CMOS互连线特性分析.pdfVIP

考虑工艺波动和散射效应的纳米级CMOS互连线特性研究 Abstract intothenano-scale featuresizeofCMOS circuitenters phase，the Asthe integrated factor the of hasbecomea designintegrated interconnect key restricting performance withrandomnaturewill nanometer variations circuits．In technology，theprocess in inthe structureof resultchanges physical integrated directly affect circuit theinterconnect integrated significantly affecting performance，which and theICmanufacturingtechnology addition，when functionalityperformance．In interconnect willresultin size，thus continuestoimprove，it decreasing produce of effectwill severe effect．The scattering greatly scattering presence increasingly ofinterconnect theinterconnect increasethe metal，therebyaffecting resistivity and and design as bandwidth．Therefore，tocorrectlyanalyze performance，suchdelay theeffectof variationsand needtoconsider process s