电子器件场效应晶体管(3).pptVIP

(4) MOS Capacitor (ideal) Capacitance-voltage characteristics(电容电压特性） (2)To measure the fast interface state Dit (3)To measure the mobile charge within the oxide Fig.6-22 6.4.6 Time-dependent capacitance measurementsTo measure the generation lifetime 6.4.7 Current-voltage characteristics of MOS gate oxidesTo understand the leakage current through the oxideFig. 6-24 (Something wrong, see English textbook and page 233(chinese textbook)) Summary (1) 实际器件与理想情况存在偏差：实际情况要考虑功函数差及界面电荷效应。 (2)实际情况下存在平带电压，从而使阈值电压偏离理想的电压值。n沟道/p-型衬底的阈值电压可正可负，与掺杂浓度有关。由于界面效应，增强型器件可能变为耗尽型。 (3)根据C-VG曲线，可以求得掺杂浓度，平带