Step-Bunching Free 英文文献资料.pdf

Materials Science Forum Vols. 740-742 (2013) pp 197-200 Online available since 2013/Jan/25 at © (2013) Trans Tech Publications, Switzerland doi:10.4028//MSF.740-742.197 Step-bunching free and 30 µm-thick SiC epitaxial layer growth on 150 mm SiC substrate a Akira Miyasaka , Jun Norimatsu, Keisuke Fukada, Yutaka Tajima, Daisuke Muto, Yusuke Kimura, Michiya Odawara, Taichi Okano, Kenji Momose, Yuji Osawa, Hiroshi Osawa and Takayuki Sato SHOWA DENKO K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1893, Japan a akira_miyasaka@sdk.co.jp, takayuki_sato@sdk.co.jp Keywords: 4H-SiC epitaxial growth, 150-mm diameter, surface morphology, uniformity, step bunching, dislocation Abstract. The production of 150 mm-diameter SiC epi-wafers is the key to the spread of SiC power devices. Besides, step-bunching free surface leads to high-performance devices. We have developed the production technology of the epitaxial growth with smooth surface morphology for 4º off Si-face 4H-SiC epitaxial layers on 150 mm diameter substrates. The various area observations of the surface by optical surface analyzer, confocal microscope and atomic force microscope revealed that there was no conventional step-bunching in whole wafer surface. While creating step-bunching free surface is more difficult for thicker epilayer growth, we have achieved step-bunching free surface for 30-µm thick epilayer on a 150 mm diameter substrate. The typical values of thickness uniformity of the 30µm-thick epilayer are 0.5% (σ/mean) and 1.7% (range/mean). A few interfacial dislocations (IDs) were detected for the 150 mm-diameter epi-wafer by reflection X-ray topography. We have succeeded in removal of IDs by the optimized growth condition. Introduction SiC epitaxi